Product Summary

The 2N6439 is an NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.

Parametrics

2N6439 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 33 Vdc; (2)Collector–Base Voltage, VCBO: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Total Device Dissipation, PD: 146W at TC = 25℃; 0.83W/℃ when Derate above 25℃; (5)Storage Temperature Range, Tstg: –65 to +200℃.

Features

2N6439 features: (1)Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz; (2)Built–In Matching Network for Broadband Operation Using Double Match Technique; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications.

Diagrams

2N6439 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N6439
2N6439
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N6400
2N6400

THYRISTOR SCR 16A 50V TO-220AB
Data Sheet
Negotiable 
2N6400G
2N6400G
ON Semiconductor
SCRs 50V 16A
Data Sheet
0-1: $0.91
1-25: $0.82
25-100: $0.56
100-500: $0.47
2N6401
2N6401
ON Semiconductor
SCRs 100V 16A
Data Sheet
Negotiable 
2N6401G
2N6401G
ON Semiconductor
SCRs 100V 16A
Data Sheet
0-1: $0.92
1-25: $0.73
25-100: $0.64
100-500: $0.50
2N6402
2N6402
ON Semiconductor
SCRs 200V 16A
Data Sheet
Negotiable 
2N6402G
2N6402G
ON Semiconductor
SCRs 200V 16A
Data Sheet
0-1: $0.92
1-25: $0.73
25-100: $0.64
100-500: $0.50