(China (Mainland))
Product Summary
The BFQ34 is an NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The BFQ34 features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.
Parametrics
BFQ34 absolute maximum ratings: (1)VCBO, collector-base voltage: 25 V; (2)VCEO, collector-emitter voltage: 18 V; (3)VEBO, emitter-base voltage: 2V; (4)IC, DC collector current: 150 mA; (5)Ptot, total power dissipation: 2.7 W; (6)Tstg, storage temperature: -65 to 150℃; (7)Tj, junction temperature: 200 ℃.
Features
BFQ34 features: (1)VCEO, collector-emitter voltage: 18 V; (2)IC, collector current: 150 mA; (3)Ptot, total power dissipation: 2.7 W; (4)fT, transition frequency: 4 GHz; (5)Vo, output voltage: 1. V; (6)PL1 output power: 2dBm; (7)ITO third order intercept point: 4dBm.
Diagrams
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Pricing (USD) |
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 BFQ34 |
Other |
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Data Sheet |
Negotiable |
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BFQ34/1 |
TriQuint Semiconductor |
Transistors RF MOSFET Small Signal RF Bipolar Module |
Data Sheet |
Negotiable |
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