(China (Mainland))
Product Summary
The MGF2430A is a power GaAs FET with an N-channel schottky gate, is designed for us in S to Ku band amplifiers. The applications of the MGF2430A include S to Ku band power amplifiers.
Parametrics
MGF2430A absolute maximum ratings: (1)Gate to drain voltage, VGDO: -15V; (2)Gate to source voltage, VGSO: -15V; (3)Drain curreent, ID: 800mA; (4)Reverse gate current, IGR: -2.4mA; (5)Forward gate current, IGF: 10.0mA; (6)Total power dissipation , PT: 5.0W; (7)Channel temperature, Tch: 175℃; (8)Storage temperature, Tstg: -65 to +175℃.
Features
MGF2430A features: (1)High output power, P1db= 30.5dBm (TYP.) at 14.5GHz; (2)High power gain, GLP= 6.5dB (TYP.) at 14.5GHz; (3)High power added efficiency, ηadd= 27%(TYP.) at 14.5GHz, P1dB.
Diagrams
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 MGF2430A |
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Negotiable |
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MGF2407A |
Other |
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Negotiable |
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MGF2415A |
Other |
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Negotiable |
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MGF2430A |
Other |
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Negotiable |
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MGF2445A |
Other |
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Negotiable |
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