(China (Mainland))
Product Summary
The MRF6S18140HS is a RF power field effect transistor. The MRF6S18140HS is designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB fo r PCN - PCS/cel lular radio and WLL applications.
Parametrics
MRF6S18140HS absolute maximum ratings: (1)Drain-source voltage, VDSS: -0.5, +68V; (2)Gate-source voltage, VGS: -0.5, +12V; (3)Storage temperature range, Tstg: -65 to +150℃; (4)Case operating temperature, TC: 150℃; (5)Operating junction temperature, TJ: 225℃.
Features
MRF6S18140HS features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)Low Gold Plating Thickness on Leads, 40μ Nominal.; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6S18140HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 1.8GHZ 28V 29W |
Data Sheet |
Negotiable |
|
||||
|
MRF6S18140HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 1.8GHZ 28V 29W |
Data Sheet |
Negotiable |
|
||||
