(China (Mainland))
Product Summary
The R1LV1616HSA-4SI is a 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. It has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV1616HSA-4SI offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.
Parametrics
R1LV1616HSA-4SI absolute maximum ratings: (1)Power supply voltage relative to VSS, VCC: -0.5 to +4.6V; (2)Terminal voltage on any pin relative to VSS, VT: -0.5 to VCC + 0.3V; (3)Power dissipation, PT: 1.0 W; (4)Storage temperature range, Tstg: -55 to +125℃; (5)Storage temperature range under bias, Tbias: -40 to +85℃.
Features
R1LV1616HSA-4SI features: (1)Single 3.0 V supply: 2.7 V to 3.6 V; (2)Fast access time: 45/55 ns (max); (3)Power dissipation: active: 9 mW/MHz (typ); standby: 1.5μW(typ); (4)Completely static memory: no clock or timing strobe required; (5)Equal access and cycle times; (6)Common data input and output: three state output; (7)Battery backup operation: 2 chip selection for battery backup; (8)Temperature range: -40 to +85℃; (9)Byte function (×8 mode) available by BYTE# & A-1.
Diagrams
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 R1LV0108ESA-5SI#B0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SI#S0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SR#B0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SR#S0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-7SI#B0 |
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IC SRAM 8BIT 70NS 32STSOP |
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R1LV0108ESA-7SI#S0 |
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IC SRAM 8BIT 70NS 32STSOP |
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