(China (Mainland))
Product Summary
The 2N6439 is an NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
Parametrics
2N6439 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 33 Vdc; (2)Collector–Base Voltage, VCBO: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Total Device Dissipation, PD: 146W at TC = 25℃; 0.83W/℃ when Derate above 25℃; (5)Storage Temperature Range, Tstg: –65 to +200℃.
Features
2N6439 features: (1)Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz; (2)Built–In Matching Network for Broadband Operation Using Double Match Technique; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N6439 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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2N6439 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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2N6426_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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2N6427_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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2N6426_D26Z_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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2N6427RLRA |
ON Semiconductor |
Transistors Darlington 500mA 50V NPN |
Data Sheet |
Negotiable |
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2N6426_D74Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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